SKU:16766329086

GaAs Wafer - Growing Method: VGF (100), Zn doped, P-Type, 3"x0.5 mm, 1sp

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Regular price $229.43 USD
Regular price $270.43 USD Sale price $229.43 USD
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18

Description

GaAs Wafer - Growing Method: VGF (100), Zn doped, P-Type, 3"x0.5 mm, 1spGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 3" dia x 0. 5mm Polishing: one side polished Doping: Zn doped Conductor type: S C P Carrier Concentration: (5. 01 6. 30) x 10^17 cm^3 Mobility: 184 200cm^2 V. S EPD: <5000 cm^2 resistivity: (5. 14 6. 67)x10^ 2 ohm. cm Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces

Oxygen free copper gasket for high vacuum sealing of 61mmOTF-1200X-HP-30

Single phase

CE Certified

8 Gold Plated spring load holders with adjustable height for measuring cylinder or coin cell up to 70mm(H) (please click a picture below 1-2 to enlarge)

The 3D Graphene Foam is made via chemical vapor deposition (CVD) processing

Variable speed 0 - 600 RPM with digital display for each plate

Orientation:                      c-axis (0001) +/- 1

Constant Current Discharging

Measurement cycles

Crystal Structure: Hexagonal

Wafer size:0

1 mm ( or 1" x 1" x 1

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